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VIEWING REFRACTIVE-INDEX PROFILES AND SMALL-SCALE INHOMOGENEITIES IN GLASS OPTICAL FIBERS: SOME TECHNIQUES.BURRUS CA; STANDLEY RD.1974; APPL. OPT.; U.S.A.; DA. 1974; VOL. 13; NO 10; PP. 2365-2369; BIBL. 9 REF.Article

OPTICAL GAIN EXCEEDING 35 DB AT 1.56 M DUE TO STIMULATED RAMAN SCATTERING BY MOLECULAR D₂ IN A SOLID SILICA OPTICAL FIBERCHRAPLYVY AR; STONE J; BURRUS CA et al.1983; OPTICS LETTERS; ISSN 0146-9592; USA; DA. 1983; VOL. 8; NO 7; PP. 415-417; BIBL. 7 REF.Article

INGAAS/INP P-I-N PHOTODIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU M WAVELENGTHLEE TP; BURRUS CA JR; DENTAI AG et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 232-238; BIBL. 26 REF.Article

LASER ACTION IN PHOTOPUMPED GAAS RIBBON WHISKERSSTONE J; BURRUS CA; CAMPBELL JC et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3038-3041; BIBL. 20 REF.Article

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PICOSECOND FREQUENCY CHIRPING AND DYNAMIC LINE BROADENING IN INGAASP INJECTION LASERS UNDER FAST EXCITATIONCHINLON LIN; LEE TP; BURRUS CA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 141-143; BIBL. 19 REF.Article

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1.1 GBS PSEUDORANDOM PULSE-CODE MODULATION OF 1.27 MU M WAVELENGTH C.W. INGAASP/INP D.H. LASERS.ABBOTT SM; MUSKA WM; LEE TP et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 349-350; BIBL. 9 REF.Article

SMALL-AREA, HIGH-RADIANCE C.W. INGAASP L.E.D.S. EMITTING AT 1.2 TO 1.3 UM.DENTAI AG; LEE TP; BURRUS CA et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 484-485; BIBL. 13 REF.Article

TRANSMISSION CHARACTERISTICS OF THREE CORNING MULTIMODE OPTICAL FIBERS.CHERIN AH; COHEN LG; HOLDEN WS et al.1974; APPL. OPT.; U.S.A.; DA. 1974; VOL. 13; NO 10; PP. 2359-2364; BIBL. 9 REF.Article

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HIGH SENSITIVITY INP/INGAAS HETEROJUNCTION PHOTOTRANSISTORCAMPBELL JC; DENTAI AG; BURRUS CA et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 18; PP. 713-714; BIBL. 5 REF.Article

IMPROVED TWO-WAVELENGTH DEMULTIPLEXING IN GAASP PHOTODETECTORCAMPBELL JC; DENTAI AG; LEE TP et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 6; PP. 601-603; BIBL. 10 REF.Article

SMALL AREA INGAAS/INP P-I-N PHOTODIODES: FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274 MB/S AND 45 MB/S LIGHTWAVE RECEIVERS AT 1.31 MU M WAVELENGTHLEE TP; BURRUS CA; DENTAI AG et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 4; PP. 155-156; BIBL. 13 REF.Article

MEASUREMENT OF VERY-HIGH SPEED PHOTODETECTORS WITH PICOSECOND INGAASP FILM LASERSWIESENFELD JM; CHRAPLYVY AR; STONE J et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 1; PP. 22-24; BIBL. 6 REF.Article

HIGH-EFFICIENCY SHORT-CAVITY INGAASP LASER WITH ONE HIGH-REFLECTIVITY MIRRORLEE TP; BURRUS CA; LIU PL et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 805-806; BIBL. 3 REF.Article

MEASUREMENT OF BEAM PARAMETERS OF INDEX-GUIDED AND GAIN-GUIDED SINGLE-FREQUENCY INGAASP INJECTION LASERSLEE TP; BURRUS CA; MARCUSE D et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 902-904; BIBL. 5 REF.Article